Graphene, a unique CMOS-compatible, two-dimensional (2D) material, provides great potential in the realization of high-performance optoelectronic devices, ,,. germanium or a III-V compound semiconductor, , leaving a big challenge for direct monolithic integration with the complementary metal-oxide-semiconductor (CMOS) technology and in achieving high bandwidth limited by the absorbing materials’ poor electrical properties.
However, for photodetection in the silicon-based optical interconnect, it still needs to be integrated with another absorbing material, e.g. The fast development of silicon photonics makes it feasible to construct optical interconnects that can replace electrical interconnects for chip-level data communications with low energy consumption and large bandwidth. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact, high-speed optoelectronic devices for graphene-based optical interconnects. Attributed to the unique electronic band structure of graphene and its ultra-broadband absorption, operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Benefiting from plasmon-enhanced graphene-light interaction and subwavelength confinement of the optical energy, a small-footprint graphene-plasmonic photodetector is achieved working at the telecommunication window, with a large a bandwidth beyond 110 GHz and a high intrinsic responsivity of 360 mA/W. Here, we demonstrate a waveguide-coupled integrated graphene plasmonic photodetector on a silicon-on-insulator platform. However, their performance with respect to responsivity and bandwidth is still limited by the weak light-graphene interaction and large resistance-capacitance product. Graphene-based photodetectors, taking advantage of the high carrier mobility and broadband absorption in graphene, have recently seen rapid development.
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